Effect of the Milling Time of the Precursors on the Physical Properties of Sprayed Aluminum-Doped Zinc Oxide (ZnO:Al) Thin Films

نویسندگان

  • Thrinath Reddy Ramireddy
  • Velmurugan Venugopal
  • Jagadeesh Babu Bellam
  • Arturo Maldonado
  • Jaime Vega-Pérez
  • Subramaniam Velumani
  • María De La Luz Olvera
چکیده

Aluminum doped zinc oxide (ZnO:Al) thin films were deposited on soda-lime glass substrates by the chemical spray technique. The atomization of the solution was carried out by ultrasonic excitation. Six different starting solutions from both unmilled and milled Zn and Al precursors, dissolved in a mix of methanol and acetic acid, were prepared. The milling process was carried out using a planetary ball mill at a speed of 300 rpm, and different milling times, namely, 15, 25, 35, 45, and 60 min. Molar concentration, [Al]/[Zn] atomic ratio, deposition temperature and time, were kept at constant values; 0.2 M, 3 at.%, 475 °C, and 10 min, respectively. Results show that, under the same deposition conditions, electrical resistivities of ZnO:Al thin films deposited from milled precursors are lower than those obtained for films deposited from unmilled precursors. X-ray diffraction analysis revealed that all films display a polycrystalline structure, fitting well with the hexagonal wurtzite structure. Changes in surface morphology were observed by scanning electron microscopy (SEM) as well, since films deposited from unmilled precursors show triangular shaped grains, in contrast to films deposited from 15 and 35 min milled precursors that display thin slices with hexagonal OPEN ACCESS Materials 2012, 5 1405 shapes. The use of milled precursors to prepare starting solutions for depositing ZnO:Al thin films by ultrasonic pyrolysis influences their physical properties.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

Articles you may be interested in Room temperature deposition of alumina-doped zinc oxide on flexible substrates by direct pulsed laser recrystallization Appl. Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methodsa) Structural, electrical, and optical properties of transparent conductive oxide ZnO:Al films prepared by dc magnet...

متن کامل

Instabilities in reactive sputtering of ZnO:Al and reliable texture-etching solution for light trapping in silicon thin film solar cells

Texture etched zinc oxide is often used as transparent front contact for silicon thin film solar cells. Reactive sputtering is a potentially low-cost process. However, process stability, film uniformity, and reproducibility are challenges to be solved. Oscillations of the control signal and subsequent reaction of the plasma emission control with moving substrates from rotatable metallic targets...

متن کامل

Ultraviolet detectors based on annealed zinc oxide thin films: epitaxial growth and physical characterizations

In this report, ultraviolet (UV) detectors were fabricated based on zinc oxide thin films. The epitaxial growth of zinc oxide thin films was carried out on bare glass substrate with preferred orientation to (002) plane of wurtzite structure through radio frequency sputtering technique. The structural properties indicated a dominant peak at 2θ=34.28º which was matched with JCPDS reference card N...

متن کامل

Enhanced Physical Properties Of Indium Tin Oxide Films Grown on Zinc Oxide-Coated Substrates

Structural, electrical and optical properties of indium tin oxide or ITO (In2O3:SnO2) thin films on different substrates are investigated. A 100-nm-thick pre-deposited zinc oxide (ZnO) buffer layer is utilized to simultaneously improve the electrical and optical properties of ITO films. High purity ZnO and ITO layers are deposited with a radio frequency sputtering in argon ambient with plasma p...

متن کامل

A Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates

The improvement of the physical properties of Indium Tin Oxide (ITO) layers is quite advantageous in photovoltaic applications. In this study the ITO film is deposited by RF sputtering onto p-type crystalline silicon (c-Si) with (100) orientation, multicrystalline silicon (mc-Si), and glass substrates coated with ZnO and annealed in vacuum furnace at 400°C. Electrical, optical, structural a...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره 5  شماره 

صفحات  -

تاریخ انتشار 2012